Afișare rezultate
Features of long-term relaxation of capacitance in rectifying structures based on n-ZnP2 |
Stamov Ivan, Tcacenco D. |
T.G. Shevchenko State University of Pridnestrovie, Tiraspol |
Semiconductors |
Nr. / 2008 / ISSN 1063-7826 |
Disponibil online 17 October, 2023. Descarcări-0. Vizualizări-71 |
Effect of the levels of intrinsic defects in the CdP2 band gap on electrical characteristics of corresponding structures with the Schottky barrier |
Stamov Ivan, Tcacenco D. |
T.G. Shevchenko State University of Pridnestrovie, Tiraspol |
Semiconductors |
Nr. / 2006 / ISSN 1063-7826 |
Disponibil online 17 October, 2023. Descarcări-0. Vizualizări-91 |
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