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Afisarea articolelor: 41-57(57)

2004

41.	A phonon depletion effect in ultrathin heterostructures with acoustically mismatched layers . Applied Physics Letters. 2004, nr. , 827-825. ISSN 0003-6951. (Cat. )

42.	Photoluminescence and resonant Raman scattering in highly conductive ZnO layers . Applied Physics Letters. 2004, nr. , 5170-5168. ISSN 0003-6951. (Cat. )

43.	Confinement effects and surface-induced charge carriers in Bi quantum wires . Applied Physics Letters. 2004, nr. , 1328-1326. ISSN 0003-6951. (Cat. )

2003

44.	Laser processing effect on magnetic properties of amorphous wires . Applied Physics Letters. 2003, nr. , 4792-4790. ISSN 0003-6951. (Cat. )

45.	Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching . Applied Physics Letters. 2003, nr. , 1553-1551. ISSN 0003-6951. (Cat. )

46.	Self-organized growth of single crystals of nanopores . Applied Physics Letters. 2003, nr. , 280-278. ISSN 0003-6951. (Cat. )

2002

47.	Doping of interfaces in (La_0.7Sr_0.3MnO ₃)_1-x:(MgO)_x composite films . Applied Physics Letters. 2002, nr. , 1650-1648. ISSN 0003-6951. (Cat. )

2001

48.	Observation of crossing pores in anodically etched n-gaas . Applied Physics Letters. 2001, nr. , 1076-1074. ISSN 0003-6951. (Cat. )

2000

49.	Semiconductor sieves as nonlinear optical materials . Applied Physics Letters. 2000, nr. , 2417-2415. ISSN 0003-6951. (Cat. )

50.	Erratum: Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference (Appl. Phys. Lett. (2000) 76 (810) (10.1063/1.125592)) . Applied Physics Letters. 2000, nr. , 1479-1479. ISSN 0003-6951. (Cat. )

51.	Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference . Applied Physics Letters. 2000, nr. , 812-810. ISSN 0003-6951. (Cat. )

1999

52.	n-type conduction in Ge-doped CuGaSe₂ . Applied Physics Letters. 1999, nr. , 2971-2969. ISSN 0003-6951. (Cat. )

53.	Preparation of rare-earth manganite-oxide thin films by metalorganic aerosol deposition technique . Applied Physics Letters. 1999, nr. , 2844-2842. ISSN 0003-6951. (Cat. )

1997

54.	Ion implantation as a tool for controlling the morphology of porous gallium phosphide . Applied Physics Letters. 1997, nr. , 3831-3829. ISSN 0003-6951. (Cat. )

55.	The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring . Applied Physics Letters. 1997, nr. , 849-847. ISSN 0003-6951. (Cat. )

1995

56.	Time resolved blue and ultraviolet photoluminescence in porous GaP . Applied Physics Letters. 1995, nr. , 3318-3316. ISSN 0003-6951. (Cat. )

1993

57.	High performance strained InGaAs/AlGaAs buried-heterostructure quantum-well lasers fabricated by in situ etching and regrowth . Applied Physics Letters. 1993, nr. , 1820-1818. ISSN 0003-6951. (Cat. )

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