Afisarea articolelor 21-3(3) pentru cuvîntul-cheie "Electron traps" , perioada: 2001 -
| Deep level transient spectroscopy characterization of porous GaP layers |
| Călin Mircea |
| Institute of Applied Physics, Academy of Sciences of Moldova |
| Proceedings of the International Semiconductor Conference |
| Vol. 1. 2000. New Jersey. DOI 10.1109/SMICND.2000. |
| Disponibil online 29 November, 2023. Descarcări-0. Vizualizări-134 |
| Formation of a double electric layer at the ZnmIn2Sm+3 (m = 1,2,3) - H2O(S2-/S22-) interface |
| Ţiuleanu Ion, Simaşchevici Alexei, Sprincean Ala |
| Institute of Applied Physics, Academy of Sciences of Moldova |
| Proceedings of the International Semiconductor Conference |
| Vol. 2. 2001. New Jersey. . |
| Disponibil online 29 November, 2023. Descarcări-0. Vizualizări-137 |
| Mecanisms of photoconductivity decay in bulk and porous InP |
| Călin Mircea |
| Institute of Applied Physics, Academy of Sciences of Moldova |
| Proceedings of the International Semiconductor Conference |
| Vol. 2. 2001. New Jersey. . |
| Disponibil online 29 November, 2023. Descarcări-0. Vizualizări-141 |
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