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III-V semiconductors"
| Ion implantation as a tool for controlling the morphology of porous gallium phosphide |
| Tighineanu Ion12, Schwab Claude R.3, Grob Jean Jacques R.3, Prevot Bernard3, Hartnagel Hans Ludwig1, Vogt Alexander4, Irmer Gert5, Monecke Jochen5 |
1 Technical University Darmstadt,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 PHASE laboratory, CNRS UPR No. 292, Strasbourg,
|
| Applied Physics Letters |
| Nr. / 1997 / ISSN 0003-6951 /ISSNe 1077-3118 |
| Disponibil online 16 June, 2023. Descarcări-0. Vizualizări-193 |
----------------------------------------------------------------------------------------------------------------------------------- | Raman modes in porous GaP under hydrostatic pressure |
| Tighineanu Ion1, Ursachi Veaceslav2, Raptis Yiannis S.3, Stergiou Vassiliki C.3, Anastassakis Evangelos M.3, Hartnagel Hans Ludwig4, Vogt Alexander4, Prevot Bernard5, Schwab Claude R.5 |
1 Technical University of Moldova,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
4 Technical University Darmstadt,
5 PHASE laboratory, CNRS UPR No. 292, Strasbourg |
| Physica Status Solidi (B) Basic Research |
| Nr. / 1999 / ISSN 0370-1972 |
| Disponibil online 19 September, 2023. Descarcări-0. Vizualizări-158 |
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