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SM ISO690:2012 DOYENNETTE, L., LUPU, Anatol, NEVOU, L., TCHERNYCHEVA, Maria, COLOMBELLI, R., JULIEN, F., VARDI, A., BAHIR, G., GUILLOT, F., MONROY, E.. GaN/Aln quantum dot intraband photodetectors at 1.3-1.5 microns. In: Moldavian Journal of the Physical Sciences, 2006, nr. 3-4(5), pp. 349-354. ISSN 1810-648X. |
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Moldavian Journal of the Physical Sciences | ||||||
Numărul 3-4(5) / 2006 / ISSN 1810-648X /ISSNe 2537-6365 | ||||||
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Pag. 349-354 | ||||||
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GaN/AlN quantum dot (QD) photodetectors based on intraband absorption and in-plane
carrier transport in the wetting layer have been fabricated and characterized. The devices are
operating at room temperature in the wavelength range 1.3-1.5 µm. The dots exhibit TM polarized absorption, linked to the s-pz transition. The photocurrent at 300K is slightly blue-
shifted with respect to the s-pz intraband absorption. The responsivity increases with temperature and reaches a record value of 8 mA/W at 300 K for detectors with interdigitated contacts. |
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