GaN/AlN quantum dot (QD) photodetectors based on intraband absorption and in-plane carrier transport in the wetting layer have been fabricated and characterized. The devices are operating at room temperature in the wavelength range 1.3-1.5 µm. The dots exhibit TM polarized absorption, linked to the s-pz transition. The photocurrent at 300K is slightly blue- shifted with respect to the s-pz intraband absorption. The responsivity increases with temperature and reaches a record value of 8 mA/W at 300 K for detectors with interdigitated contacts.