Growth and characterization of crack-free GaN films grown on cracked Si-doped GaN templates

Sia Engkee; Hao Maosheng; Chua Soo Jin; Tiginyanu Ion; Ichizli V.; Mutamba Kabula; Hartnagel Hans Ludwig; Zhang Ji; Tripathy Sudhiranjan R.

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2024-06-20 11:59

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SIA, Engkee, HAO, Maosheng, CHUA, Soo Jin, TIGINYANU, Ion, ICHIZLI, V., MUTAMBA, Kabula, HARTNAGEL, Hans Ludwig, ZHANG, Ji, TRIPATHY, Sudhiranjan R.. Growth and characterization of crack-free GaN films grown on cracked Si-doped GaN templates. In: Proceedings of SPIE - The International Society for Optical Engineering, 2001, vol. 4594, pp. 201-210. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.446586

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Proceedings of SPIE - The International Society for Optical Engineering

Volumul 4594 / 2001 / ISSN 0277-786X /ISSNe 1996-756X

Growth and characterization of crack-free GaN films grown on cracked Si-doped GaN templates

DOI:https://doi.org/10.1117/12.446586

Pag. 201-210

Sia Engkee¹, Hao Maosheng¹, Chua Soo Jin¹, Tiginyanu Ion²³, Ichizli V.⁴, Mutamba Kabula⁴, Hartnagel Hans Ludwig⁴, Zhang Ji⁵, Tripathy Sudhiranjan R.⁵

¹ Institute of Materials Research Engineering, Singapore ,
² Institute of Applied Physics, Academy of Sciences of Moldova,
³ Technical University of Moldova,
⁴ Darmstadt University of Technology,
⁵ National University of Singapore

Disponibil în IBN: 14 februarie 2024

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Continuous GaN films were grown on the top of cracked Si-doped n⁺-GaN epilayers by MOCVD techniques. Raman-scattering studies of the samples indicated strain-free top GaN film. The biaxial compressive stress estimated by using X-ray diffraction analysis was as low as 0.036 GPa for sample grown under optimized conditions. The results obtained show that the use of an intermediate relaxed n⁺-GaN:Si layer is perspective for growing high quality GaN films.

Cuvinte-cheie
Compressive stress, Cracks, Film growth, Gallium nitride, Metallorganic chemical vapor deposition, optimization, Raman scattering, Semiconducting silicon, Semiconductor doping, X ray diffraction analysis

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