Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
93 0 |
SM ISO690:2012 LANGA, Sergiu, TIGINYANU, Ion, CARSTENSEN, Juergen, CHRISTOPHERSEN, Marc, FOLL, Helmut. Formation of porous layers with different morphologies during anodic etching of n-InP. In: Electrochemical and Solid-State Letters, 2000, vol. 3, pp. 514-516. ISSN 1099-0062. DOI: https://doi.org/10.1149/1.1391195 |
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Electrochemical and Solid-State Letters | ||||||
Volumul 3 / 2000 / ISSN 1099-0062 | ||||||
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DOI:https://doi.org/10.1149/1.1391195 | ||||||
Pag. 514-516 | ||||||
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Two different morphologies of porous layers were observed in (100)-oriented n-InP anodically etched in an aqueous solution of HCl. At high current density (60 mA/cm2) anodization leads to the formation of so-called current-line oriented pores. When the current density decreased to values lower than 5 mA/cm2 the morphology of the porous layers sharply changed and the pores began to grow along definite 〈111〉 crystallographic directions. |
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Cuvinte-cheie Anodic oxidation, current density, etching, morphology, porous materials, Solutions |
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