Formation of porous layers with different morphologies during anodic etching of n-InP

Langa Sergiu; Tiginyanu Ion; Carstensen Juergen; Christophersen Marc; Foll Helmut

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LANGA, Sergiu, TIGINYANU, Ion, CARSTENSEN, Juergen, CHRISTOPHERSEN, Marc, FOLL, Helmut. Formation of porous layers with different morphologies during anodic etching of n-InP. In: Electrochemical and Solid-State Letters, 2000, vol. 3, pp. 514-516. ISSN 1099-0062. DOI: https://doi.org/10.1149/1.1391195

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Electrochemical and Solid-State Letters

Volumul 3 / 2000 / ISSN 1099-0062

Formation of porous layers with different morphologies during anodic etching of n-InP

DOI:https://doi.org/10.1149/1.1391195

Pag. 514-516

Langa Sergiu¹²³, Tiginyanu Ion³², Carstensen Juergen¹, Christophersen Marc¹, Foll Helmut¹

¹ Christian-Albrechts University of Kiel,
² Technical University of Moldova,
³ Institute of Applied Physics, Academy of Sciences of Moldova

Disponibil în IBN: 16 ianuarie 2024

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Rezumat

Two different morphologies of porous layers were observed in (100)-oriented n-InP anodically etched in an aqueous solution of HCl. At high current density (60 mA/cm²) anodization leads to the formation of so-called current-line oriented pores. When the current density decreased to values lower than 5 mA/cm² the morphology of the porous layers sharply changed and the pores began to grow along definite 〈111〉 crystallographic directions.

Cuvinte-cheie
Anodic oxidation, current density, etching, morphology, porous materials, Solutions

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