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 SM ISO690:2012SYRBU, Nicolae, DOROGAN, Valerian, CRETSU, R.. Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy. In: Optics Communications, 1996, vol. 132, pp. 449-451. ISSN 0030-4018. DOI: https://doi.org/10.1016/0030-4018(96)00382-3 |
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  Optics Communications |
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| Volumul 132 / 1996 / ISSN 0030-4018 | ||||||
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| DOI:https://doi.org/10.1016/0030-4018(96)00382-3 | ||||||
| Pag. 449-451 | ||||||
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The results of In0.53Ga0.47As-InP epitaxial structure interface investigation are presented. It is shown that the transition from InP to In0.53Ga0.47As layer is associated with an interfacial transitional layer formation with a gradient composition. The dynamics of such layer formation has been followed by infrared spectroscopy. |
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| Cuvinte-cheie Epitaxy, phonon, reflectivity, Solid solution |
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