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 SM ISO690:2012SYRBU, Nicolae, DOROGAN, Valerian, CRETSU, R.. Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy. In: Optics Communications, 1996, vol. 132, pp. 449-451. ISSN 0030-4018. DOI: https://doi.org/10.1016/0030-4018(96)00382-3 |
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  Optics Communications |
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| Volumul 132 / 1996 / ISSN 0030-4018 | ||||||
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| DOI:https://doi.org/10.1016/0030-4018(96)00382-3 | ||||||
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The results of In0.53Ga0.47As-InP epitaxial structure interface investigation are presented. It is shown that the transition from InP to In0.53Ga0.47As layer is associated with an interfacial transitional layer formation with a gradient composition. The dynamics of such layer formation has been followed by infrared spectroscopy. |
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| Cuvinte-cheie Epitaxy, phonon, reflectivity, Solid solution |
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<meta name="citation_title" content="Formation of InGaAs layers onto InP substrates by liquid-phase epitaxy"> <meta name="citation_author" content="Syrbu Nicolae"> <meta name="citation_author" content="Dorogan Valerian"> <meta name="citation_author" content="Cretsu R."> <meta name="citation_publication_date" content="1996/12/15"> <meta name="citation_journal_title" content="Optics Communications"> <meta name="citation_firstpage" content="449"> <meta name="citation_lastpage" content="451"> <meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/syrbu1996.pdf">
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