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 SM ISO690:2012EVTODIEV, Igor, LEONTIE, Liviu, CARAMAN, Mihail, STAMATE, Marius D., ARAMĂ, Efim. Optical properties of p -GaSe single crystals doped with Te. In: Journal of Applied Physics, 2009, vol. 105, pp. 1-6. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.3068464 |
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  Journal of Applied Physics |
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| Volumul 105 / 2009 / ISSN 0021-8979 /ISSNe 1089-7550 | ||||||
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| DOI:https://doi.org/10.1063/1.3068464 | ||||||
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Optical absorption in the region of fundamental absorption edge and photoluminescence (at 78 and 293 K) of p -GaSe crystals doped with Te (0.05, 0.10, and 0.05 at. %) have been studied. At low concentrations (0.05 at. %), Te atoms liquidate structural defects in GaSe single crystals and modify their excitonic absorption and photoluminescence. For increased concentrations of 0.10 and 0.50 at. %, Te creates impurity states responsible for the red shift of the fundamental absorption edge of GaSe and appearance of new photoluminescence bands, B (at 2.000 eV) and C (at 1.700 eV). The activation energies of the thermal quenching of Te-related PL bands B and C was found to be 28 and 32 meV (for T[removed]150 K), respectively. |
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| Cuvinte-cheie Engineering controlled terms Activation energy, Crystal atomic structure, Crystal impurities, layered semiconductors, Light absorption, optical properties, photoluminescence, Selenium compounds, single crystals, Tellurium Engineering uncontrolled terms Excitonic absorption, Fundamental absorption edge, GaSe crystals, Impurity state, Low concentrations, Photoluminescence bands, structural defect, Thermal quenching Engineering main heading Gallium compounds |
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