Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
80 0 |
SM ISO690:2012 LEONTIE, Liviu, CARAMAN, Mihail, EVTODIEV, Igor, VATAVU-CUCULESCU, Elmira, MIJA, Ana. Optical properties of bismuth oxide thin films prepared by reactive d.c. magnetron sputtering onto p-GaSe (Cu). In: Physica Status Solidi (A) Applications and Materials Science, 2008, vol. 205, pp. 2052-2056. ISSN 1862-6300. DOI: https://doi.org/10.1002/pssa.200778868 |
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Physica Status Solidi (A) Applications and Materials Science | ||||||
Volumul 205 / 2008 / ISSN 1862-6300 | ||||||
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DOI:https://doi.org/10.1002/pssa.200778868 | ||||||
Pag. 2052-2056 | ||||||
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Bismuth oxide (Bi 2O 3) thin films with thickness in the range 20-160 nm have been deposited by d.c. reactive magnetron sputtering of Bi in an atmosphere Ar:O 2 (1:1), onto single crystalline p-GaSe (Cu) substrates. The optical constants, n and k, of oxide films have been determined from the analysis of the polarization ellipse of the reflected radiation from outer surface of Bi 2O 3/p-GaSe structures. In the wavelength range 400-800 nm the refractive index of nanometric Bi 2O 3 films onto GaSe(Cu) decreases from 2.10 to 1.78 and it seen to increase at decreasing sample thickness. In order to determine the interaction mechanism between semiconducting oxide film and GaSe surface, the spectral characteristics of photocurrent through Bi 2O 3/p-GaSe junction and optical absorption in the range 400-800 nm have been examined. As resulted from respective analyses, Bi 2O 3 film generates new valence bonds, which contribute to the increase in the density of localized states at Bi 2O 3/p-GaSe (Cu) junction interface. |
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Cuvinte-cheie absorption, Bismuth, copper, magnetron sputtering, Magnetrons, Optical constants, optical properties, refractive index, Semiconducting indium, Thick films, thin films |
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