| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 158 0 |
 SM ISO690:2012LANGA, Sergiu, CARSTENSEN, Juergen, CHRISTOPHERSEN, Marc, FOLL, Helmut, TIGINYANU, Ion. Observation of crossing pores in anodically etched n-gaas. In: Applied Physics Letters, 2001, vol. 78, pp. 1074-1076. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.1350433 |
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  Applied Physics Letters |
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| Volumul 78 / 2001 / ISSN 0003-6951 /ISSNe 1077-3118 | ||||||
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| DOI:https://doi.org/10.1063/1.1350433 | ||||||
| Pag. 1074-1076 | ||||||
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| Rezumat | ||||||
Pores in GaAs in the micrometer range and oriented in 〈111〉 directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very promising feature for three-dimensional micro-and nanostructuring of III-V compounds for the production of photonic materials. |
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| Cuvinte-cheie Electrochemical etching, III-V semiconductors, Indium Phosphides |
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