Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
![]() ![]() |
![]() LANGA, Sergiu, CARSTENSEN, Juergen, CHRISTOPHERSEN, Marc, FOLL, Helmut, TIGINYANU, Ion. Observation of crossing pores in anodically etched n-gaas. In: Applied Physics Letters, 2001, vol. 78, pp. 1074-1076. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.1350433 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Applied Physics Letters | ||||||
Volumul 78 / 2001 / ISSN 0003-6951 /ISSNe 1077-3118 | ||||||
|
||||||
DOI:https://doi.org/10.1063/1.1350433 | ||||||
Pag. 1074-1076 | ||||||
|
||||||
Rezumat | ||||||
Pores in GaAs in the micrometer range and oriented in 〈111〉 directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very promising feature for three-dimensional micro-and nanostructuring of III-V compounds for the production of photonic materials. |
||||||
Cuvinte-cheie Electrochemical etching, III-V semiconductors, Indium Phosphides |
||||||
|