Features of radiative recombination of iron-doped gallium antimonide

Mihălache Alexei

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2022-08-25 23:01

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MIHĂLACHE, Alexei. Features of radiative recombination of iron-doped gallium antimonide. In: IFMBE Proceedings: . 4th International Conference on Nanotechnologies and Biomedical Engineering, Ed. 4, 18-21 septembrie 2019, Chişinău. Switzerland: Springer Nature Switzerland AG, 2020, Ediția 4, Vol.77, pp. 29-32. ISBN 978-303031865-9. ISSN 16800737. DOI: https://doi.org/10.1007/978-3-030-31866-6_6

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IFMBE Proceedings
Ediția 4, Vol.77, 2020

Conferința "Conference on Nanotechnologies and Biomedical Engineering"
4, Chişinău, Moldova, 18-21 septembrie 2019

Features of radiative recombination of iron-doped gallium antimonide

DOI:https://doi.org/10.1007/978-3-030-31866-6_6

Pag. 29-32

Mihălache Alexei

Tiraspol State University

Proiecte:

GA 810652

Promoting smart specialization at the Technical University of Moldova by developing the field of Novel Nanomaterials for BioMedical Applications through excellence in research and twinning

Disponibil în IBN: 30 octombrie 2020

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We report on the results of the studies of the features of radiative recombination of iron-doped gallium antimonide at T = 2 K, in the absence of an external magnetic field. Specimens were prepared by a modified method of zone melting. The concentration of iron incorporated in the melt varied in the range of 0.001–3 (atomic percent). The studied specimens exhibited p-type conductivity. It was demonstrated that in gallium antimonide iron created a shallow acceptor level with the ionization energy of (22 ± 0.2) meV. In addition, the structure of the radiative recombination spectra was determined and the concentration of radiative centers was found out.

Cuvinte-cheie
Biomedical engineering, gallium, Gallium compounds, III-V semiconductors, nanotechnology, photoluminescence, Semiconducting films

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<dc:creator>Mihălache, A.</dc:creator>
<dc:date>2020</dc:date>
<dc:description xml:lang='en'><p>We report on the results of the studies of the features of radiative recombination of iron-doped gallium antimonide at T&nbsp;=&nbsp;2&nbsp;K, in the absence of an external magnetic field. Specimens were prepared by a modified method of zone melting. The concentration of iron incorporated in the melt varied in the range of 0.001&ndash;3 (atomic percent). The studied specimens exhibited p-type conductivity. It was demonstrated that in gallium antimonide iron created a shallow acceptor level with the ionization energy of (22&nbsp;&plusmn;&nbsp;0.2)&nbsp;meV. In addition, the structure of the radiative recombination spectra was determined and the concentration of radiative centers was found out.</p></dc:description>
<dc:source>IFMBE Proceedings (Ediția 4, Vol.77) 29-32</dc:source>
<dc:subject>Biomedical engineering</dc:subject>
<dc:subject>gallium</dc:subject>
<dc:subject>Gallium compounds</dc:subject>
<dc:subject>III-V semiconductors</dc:subject>
<dc:subject>nanotechnology</dc:subject>
<dc:subject>photoluminescence</dc:subject>
<dc:subject>Semiconducting films</dc:subject>
<dc:title>Features of radiative recombination of iron-doped gallium antimonide</dc:title>
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