Compensated cadmium telluride single crystals are widely used as base materials for highsensitivity uncooled detectors of nuclear radiation. Cadmium telluride is promising semiconductor material in X- and γ-radiation dosimetry and spectrometry due to large atomic numbers of atoms in the compound (ZCd = 48, ZTe = 52), a large band gap (E ≈ 1,5 eV at 300 K) and sufficiently high mobility of charge carriers ((μe ~ 103 cm2 /V s, μh ~ 102 cm2 /V s) at room temperature [1]. In addition to these parameters, an important requirement for detector material is the large resistivity, which is achieved, in particular, by alloying CdTe with elements of III (In, Al) and VII (Cl, Br) groups. Among these dopant impurities, primary attention is traditionally given to chlorine. In this paper the effects of microwave radiation on transformation of exciton-impurity complexes of CdTe:Cl single crystals, grown by the Bridgman method, have been studied. Irradiation of crystals has been carried out in a special mode for duration of 3 s (the interval between treatments 2–4 s) due to the fact that such processing can avoid overheating of inhomogeneous sample. Power density of microwave radiation was 7.5 W/cm2, frequency of 2.45 GHz. The increase in intensity of the (D0, X) line in photoluminescence spectrum (PL) indicates the activation of CdTe centres caused by microwave irradiation. The integral intensity of low-temperature exciton photoluminescence, which is one of the criteria of quality of single crystal, changes non-monotonic – increases at low doses of microwave irradiation, reaching a maximum value at a total irradiation time t = 30 s and decreases with further increasing of time of microwave treatment. The experimental results on the effect of γ-irradiation on the low-temperature photoluminescence spectra of CdTe: Cl indicate complex changes that occur in the impurity-defect system of single crystals. The integral intensity of exciton PL lines depends non-monotonically on the irradiation dose. For undoped samples of CdTe, as a result of radiation-stimulated ordering of the crystal structure, PL intensity increases with doses D≤ 3 kGy, and decreases with increasing of radiation dose. For doped with chlorine samples ordering the surface region of single crystals occurs at doses D ≤ 8 kGy for CdTe: Cl (NCl = 5⋅1017 cm-3) and D ≤ 20 kGy for the CdTe: Cl (N Cl = 5⋅1019 cm-3), further increasing of γ-irradiation dose leads to a decrease in integral PL intensity due to generation of nonradiative recombination channel via deep levels due to mechanical stresses and defect recombination centres. In summary, these studies revealed the transformation of defects involving chlorine in CdTe:Cl under influence of microwave and γ-irradiation and identify effective technological regimes of treatments of single crystals.