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 SM ISO690:2012VLASOV, S., OVSYANNIKOV, A.. The Rate of Surface Generation of Charge Carriers at the Semiconductor–Glass Interface
. In: Surface Engineering and Applied Electrochemistry, 2008, nr. 1(44), pp. 78-80. ISSN 1068-3755. |
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  Surface Engineering and Applied Electrochemistry |
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| Numărul 1(44) / 2008 / ISSN 1068-3755 /ISSNe 1934-8002 | ||||||
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A method was proposed that allows to one to determine the temporal dependence of the rate of the surface generation at the semiconductor–insulator interface. It was shown that the rate of surface generation in metal–insulator–semiconductor (MIS) structures made of n-Si covered by a lead-borosilicate glass was a function of time.
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