The features of the photoelectric properties of silicon with multicharged nanoclusters of manganese atoms are studied. The patterns of change in the multiplicity of the charge state of the nanoclusters as a function of the Fermi level position are determined. It is shown that the samples with the maximum multiplicity of the charge of the nanoclusters exhibit a number of new physical effects, i.e., anomalously high extrinsic photoconductivity within a range of 3–5 μm, giant residual conductivity, and photoconductivity stimulated by an electrical field. In samples with a minimal charge state of the nanoclusters, the effect of anomalously deep infrared quenching of the photoconductivity is observed, the quenching multiplicities of which achieve 6 or 7 orders. The laws for controlling the photoelectric properties of silicon by changing the charge state of the nanoclusters are determined.