Chalcogenide glassy semiconductors (CGS) are promising materials for applications in electronics and optoelectronics [1], which requires the establishment of ways to manage their electronic properties. It is known that in CGS materials has correlation between physical properties and structural features which depend on the sample preparation process, the chemical composition and the presence of impurities.    The studies established that the features of the photoconductivity Se95As5CGS system containing impurities (samarium) is satisfactorily explained within the model intrinsic charged defects(U- centers with a negative effective electron correlation energy). It is established the energy position of the electronic states in the band gap corresponding to the D+ and D- -centers (A+ and A-), their excited state(D0-defects containingone electron) corresponding to thermal(levels of T+ and T-) and optical transitions(levels O+ and O-).Determine such important parameters of the model, as the value of the effective correlation energy Uef for VAP D+ and D- and the polaron energy relaxation of W+ and W-, which are: Uef=-0.65eV; W+ = 0.45eVandW- = 0.45eV.