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 SM ISO690:2012BAKERENKOV, A.. The fitting parameters extraction of conversion model of the low dose rate effect in bipolar devices. In: Nanotechnologies and Biomedical Engineering, Ed. 1, 7-8 iulie 2011, Chișinău. Technical University of Moldova, 2011, Editia 1, pp. 236-238. ISBN 978-9975-66-239-0.. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Nanotechnologies and Biomedical Engineering Editia 1, 2011 |
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Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 1, Chișinău, Moldova, 7-8 iulie 2011 | ||||||
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| Pag. 236-238 | ||||||
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The Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar devices consists of in base current degradation of NPN and PNP transistors increase as the dose rate is decreased [1]. As a result of almost 20-year studying, the some physical models of effect are developed, being described in [2] in detail. Accelerated test methods, based on these models use in standards [3, 4]. In [5] the conversion model of the effect, that allows to describe the inverse S-shaped excess base current dependence versus dose rate, was proposed. This paper presents the problem of conversion model’s fitting parameters extraction. |
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| Cuvinte-cheie Enhanced Low Dose Rate Sensitivity, ELDRS. bipolar devices, hardness assurance. |
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