Articolul precedent |
Articolul urmator |
573 0 |
SM ISO690:2012 PENIN, Alexander A., SIDORENKO, Anatolie. Approximation of MOSFET transistor characteristics in micro- and nanoelectronics. In: Nanotechnologies and Biomedical Engineering, Ed. 1, 7-8 iulie 2011, Chișinău. Technical University of Moldova, 2011, Editia 1, pp. 215-217. ISBN 978-9975-66-239-0.. |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Nanotechnologies and Biomedical Engineering Editia 1, 2011 |
||||||
Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 1, Chișinău, Moldova, 7-8 iulie 2011 | ||||||
|
||||||
Pag. 215-217 | ||||||
|
||||||
Descarcă PDF | ||||||
Rezumat | ||||||
The base approach, giving a wide class of functions convenient for engineering practice for the formal description of I-V characteristics of the MOSFET transistors, is developed. The similarity of I-V characteristics of semiconductor devices and the quasi-resonant converter of voltage is an approach basis. The offered functions have certain physical sense that allows modifying purposefully them for the flexibility of their form. |
||||||
Cuvinte-cheie approximation, I-V characteristic, model, transistor |
||||||
|