Approximation of MOSFET transistor characteristics in micro- and nanoelectronics
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PENIN, Alexander A., SIDORENKO, Anatolie. Approximation of MOSFET transistor characteristics in micro- and nanoelectronics. In: Nanotechnologies and Biomedical Engineering, Ed. 1, 7-8 iulie 2011, Chișinău. Technical University of Moldova, 2011, Editia 1, pp. 215-217. ISBN 978-9975-66-239-0..
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Nanotechnologies and Biomedical Engineering
Editia 1, 2011
Conferința "International Conference on Nanotechnologies and Biomedical Engineering"
1, Chișinău, Moldova, 7-8 iulie 2011

Approximation of MOSFET transistor characteristics in micro- and nanoelectronics


Pag. 215-217

Penin Alexander A., Sidorenko Anatolie
 
Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova
 
 
Disponibil în IBN: 22 iulie 2019


Rezumat

The base approach, giving a wide class of functions convenient for engineering practice for the formal description of I-V characteristics of the MOSFET transistors, is developed. The similarity of I-V characteristics of semiconductor devices and the quasi-resonant converter of voltage is an approach basis. The offered functions have certain physical sense that allows modifying purposefully them for the flexibility of their form.

Cuvinte-cheie
approximation, I-V characteristic, model, transistor