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 SM ISO690:2012SHISHIYANU, Sergiu, SHISHIYANU, Teodor, YILMAZ, Ercan, TURAN, Rasit, MOGADDAM , N.A.. Improvement of SiO2(Ge)SiO2/Si nanostructures by low dose γ-radiation. In: Nanotechnologies and Biomedical Engineering, Ed. 1, 7-8 iulie 2011, Chișinău. Technical University of Moldova, 2011, Editia 1, pp. 203-206. ISBN 978-9975-66-239-0.. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Nanotechnologies and Biomedical Engineering Editia 1, 2011 |
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Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 1, Chișinău, Moldova, 7-8 iulie 2011 | ||||||
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| Pag. 203-206 | ||||||
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Effect of γ – radiation on SiO2(Ge)SiO2/Si nanostructures structural defects was investigated by C-V measurements characterization. The obtained results demonstrated that by low dose γ-radiation (0.1Gy-150Gy) have been essentially reduced the negative charge defects in the nanocomposite structures SiO2(Ge)SiO2/Si. At higher doses (350Gy-4000Gy) the concentration of positive charge defects slowly increased and C-V characteristics moved to the position of the C-V characteristics of pure SiO2 (without nc-Ge) having the same curves configuration. At the average doses (200Gy-350Gy) the concentration of negative charge defects and positive charge defects were approximately equal and the radiation stability of samples was the highest. |
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| Cuvinte-cheie Ge nanocrystal, SiO2/Si, structural defects, –radiation |
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