| Articolul precedent |
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 SM ISO690:2012MAHMOOD, Ainorkhilah, AHMED, Naser Mahmoud, TIGINYANU, Ion, YUSOF, Yushamdan, KWONG, Yamfong, SIANG, Chuah Lee, HASSAN, Zainuriah Bint. The role of alternating current in photo-assisted electrochemical porosification of GaN. In: Nanotechnologies and Biomedical Engineering, Ed. 2, 18-20 aprilie 2013, Chișinău. Technical University of Moldova, 2013, Editia 2, pp. 383-384. ISBN 978-9975-62-343-8.. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Nanotechnologies and Biomedical Engineering Editia 2, 2013 |
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Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 2, Chișinău, Moldova, 18-20 aprilie 2013 | |
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| Pag. 383-384 | |
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In this paper, we report the formation of porous GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical (ACPEC) etching conditions. The ACPEC formed porous GaN with excellent structural and surface morphology. Field emission scanning electron microscope (FESEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HR-XRD) phi-scan and rocking curves measurements evidenced important features of the pore morphology and nanostructures. According to the FESEM micrographs, the spatial nanoarchitecture of the porous structures exhibits pores with perfect hexagonal shape. The AFM measurements revealed an increase in the surface roughness induced by porosification. X-ray diffraction phi-scan showed that porous GaN sample maintained the epitaxial features. |
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| Cuvinte-cheie Porous GaN, Alternating Current Photo-Assisted Electrochemical Etching (ACPEC), FESEM, AFM, HR-XRD. |
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