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SM ISO690:2012 TSURKAN, Ana. Shubnikov de Haas oscillations in Bi wires doped with acceptor impurities. In: Nanotechnologies and Biomedical Engineering, Ed. 2, 18-20 aprilie 2013, Chișinău. Technical University of Moldova, 2013, Editia 2, pp. 318-321. ISBN 978-9975-62-343-8.. |
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Nanotechnologies and Biomedical Engineering Editia 2, 2013 |
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Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 2, Chișinău, Moldova, 18-20 aprilie 2013 | |||||||
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Pag. 318-321 | |||||||
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Shubnikov de Haas (ShdH) oscillations in single-crystal wires of Bi doped with acceptor impurities of Sn up to 0.3at% with diameters of 100 nm to 5 μm were investigated. The wires obtained by the liquid phase casting were single-crystals of the cylindrical form in glass insulation with the standard (1011) orientation along the wire axis. All investigated samples exhibited ShdH oscillations of charge carriers in L and T points of the Brillouin zone in a temperature range 2.1 < Т < 4.2 К. The period of oscillations is independent of diameter. It is shown, that with an increase in the degree of doping Bi with an acceptor impurity, the Fermi surface of T - holes increases by more than an order of magnitude; L – holes, by 3 times. The cyclotron mass, Dingle temperature and the position of the Fermi level εF of T holes during doping were calculated. The results were compared with similar data obtained on bulk samples. |
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Cuvinte-cheie wires in glass insulation, Bi-Sn, Shubnikov de Haas effect, Fermi surface |
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