Articolul precedent |
Articolul urmator |
436 0 |
SM ISO690:2012 SHISHIYANU, Teodor. Reliability and mechanism of radiation degradation of microeletronic devices. In: Nanotechnologies and Biomedical Engineering, Ed. 2, 18-20 aprilie 2013, Chișinău. Technical University of Moldova, 2013, Editia 2, pp. 191-193. ISBN 978-9975-62-343-8.. |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Nanotechnologies and Biomedical Engineering Editia 2, 2013 |
||||||
Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 2, Chișinău, Moldova, 18-20 aprilie 2013 | ||||||
|
||||||
Pag. 191-193 | ||||||
|
||||||
Rezumat | ||||||
This review pape is destinated to investigation the mechanism and radiation degradation of microelectroic devices whith p-n junction, including Space Solar Cells (SSC) on the base of Si, GaAs, InP, InGaP/GaAs by using publicated experimental results of NASDA Engineering Test Satellite – V (ETS-V), Solar Cell Monitor(SCM) and other results publicated in different papers, γ-radiation degradation of MOSdevises on the base of high-k dielectrics (ZrO2/Si and HfO2/Si). |
||||||
|