The present work is devoted to the study of structural features of As2Se3, As40Se30S30, As40Se30Te30, As33Se33.3S33.4 and As33Se33.3Te33.4 compositions using the method of Raman spectroscopy. The advantage of given method by investigating the chalcogenide glasses is that unlike the crystals in given materials is violated of selection rules and all the oscillation modes contributes for the light scattering. Therefore in mentioned materials Raman scattering (RS) investigations give more information on oscillation spectra than on crystals. Similar investigations in low-energy range allow for obtaining the information of oscillation state density in acoustic frequency ranges. RS spectra of amorphous and glass-like materials are differed from the crystals that in low-frequency range (ω<100 cm-1) the wide band with maximum called boson peak (BP) at the frequency ω=(1/3-1/5) ωD (ωD -is Debye frequency) has been observed. BP appearance is related to the excessive density of acoustic vibrational states localized in material heterogeneities [1]. Synthesis of As2Se3, As40Se30S30, As40Se30Te30, As33.3Se33.3S33.4 and As33.3Se33.3Te33.4 materials has been carried out in the following sequence: high pure elementary substances in appropriate atomic percentages are filled into quartz ampoules. After evacuating the air up to pressure 10-4 mm Hg for 3 hours they are heated up to 900-9500C and kept for about 12 hours at this temperature. To obtain homogeneous samples synthesis has been conducted in the rotary furnace but, cooling has been made out in the off furnace. The films 10 mkm with thickness used in the investigations have been obtained by thermal evaporation with the rate 0.4-0.5 mkm/min on the glass substrate in vacuum under the pressure 10-4 mm Hg. Raman spectra has been investigated on three-dimensional Confocal Laser Micro-spectrograph. The excitation has been carried out by He-Ne laser 25 mWt with radiation power and wavelength 632.8 nm. Raman spectra of all glass-like compositions have broad the maximum BP which the intensity, shape and position for different chemical compositions are distinguished from one another. More noticeable difference is observed among the samples of stoichiometric and non-stoichiometric compositions. In all As2Se3, As40Se30S30, As40Se30Te30 stoichiometric compositions BP frequencies are same (48.9cm-1) and significantly less than BP frequencies (67.8cm-1) of As33.3Se33.3S33.4 and As33.3Se33.3Te33.4 non-stoichiometric compositions. It indicates small sizes of medium order in the first case comparing with the second one. Among of stoichiometric compositions the most slightly expressed BP is observed in As40Se30S30 composition. This fact is explained by high chemical activity of sulfur atoms which contributes to the creation of network-chain structure in the amorphous matrix. BP in RS spectrum of As33.3Se33.3S33.4 and As33.3Se33.3Te33.4 non-stoichiometric compositions involves several narrow maxima which overlap forms a rather wide peak. It’s connected with arising some molecular fragments and degrees addition freedom due to chalcogenide atoms, in the result of these reduces the size of in-homogeneities and creates a new structural fragments. Of all compositions BP for As33.3Se33.3Te33.4 has the highest intensity. It is attributed to the fact that the presence of tellurium atoms contributes to destruction of chain molecules which increases the number of broken bonds, the concentration of charged defects and degree disorder.