Усиление и лазерная генерация на М-полосе люминесценции
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2020-06-24 15:26
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HADJI, Piotr, МАРКОВ, Д, НАДЬКИН, Л.. Усиление и лазерная генерация на М-полосе люминесценции. In: Telecommunications, Electronics and Informatics, Ed. 5, 20-23 mai 2015, Chișinău. Chișinău, Republica Moldova: 2015, Ed. 5, pp. 269-271. ISBN 978-9975-45-377-6.
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Telecommunications, Electronics and Informatics
Ed. 5, 2015
Conferința "Telecommunications, Electronics and Informatics"
5, Chișinău, Moldova, 20-23 mai 2015

Усиление и лазерная генерация на М-полосе люминесценции


Pag. 269-271

Hadji Piotr1, Марков Д2, Надькин Л.2
 
1 Институт прикладной физики АНМ,
2 Приднестровский Государственный Университет им. Т.Г.Шевченко
 
 
Disponibil în IBN: 22 mai 2018


Rezumat

A new lasing mechanism for semiconductors like CuCl, CuBr is proposed based on the two-photon pumping of biexcitons from the ground state of the crystal and generation or amplification of light in the region of M-band of luminescence due to the optical exciton-biexciton conversion. It was shown that the net gain essentially depends on the level of two-photon pumping and rapidly decreases deep into the crystal due to the spatial depletion of pump radiation.

Cuvinte-cheie
М-полоса люминесценции, экситон, биэкситон