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 SM ISO690:2012CHUKITA, V.. The nature of the edge emission bands of n-CdSe/mica epilayers. In: Telecommunications, Electronics and Informatics, Ed. 5, 20-23 mai 2015, Chișinău. Chișinău, Republica Moldova: 2015, Ed. 5, pp. 169-170. ISBN 978-9975-45-377-6. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Telecommunications, Electronics and Informatics Ed. 5, 2015 |
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Conferința "Telecommunications, Electronics and Informatics" 5, Chișinău, Moldova, 20-23 mai 2015 | ||||||
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| Pag. 169-170 | ||||||
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We study the spectra of the boundary cathodoluminescence of n-CdSe undoped epilayers grown in a quasi-closed system on mica cristals. It was established that in the layers obtained at the evaporation temperature of 650° C substrate temperature of 480° C and the density of the excitation current j = 0.5 A/cm2 on the long wave wing of the edge emission bands appear equidistant lines associated with LO - phonon replicas non-phonon line, due to the radiative capture of the band electrons by acceptor Vcd - center of the CdSe crystals. |
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| Cuvinte-cheie acceptor centers, Alentsev Fock method, edge emission, cadmium vacancies (Vcd), epilayer, cathodoluminescence, Radiative recombination |
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