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 SM ISO690:2012HIDALGO, Pedro, PIQUERAS, Javier, SIRBU, Lilian, TIGINYANU, Ion. Cathodoluminescence microscopy and spectroscopy of porous n-InP. In: Semiconductor Science and Technology, 2005, vol. 20, pp. 1179-1182. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/20/12/006 |
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  Semiconductor Science and Technology |
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| Volumul 20 / 2005 / ISSN 0268-1242 | ||||||
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| DOI:https://doi.org/10.1088/0268-1242/20/12/006 | ||||||
| Pag. 1179-1182 | ||||||
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The luminescence of porous InP prepared by electrochemical etching is investigated by cathodoluminescence (CL) in a scanning electron microscope (SEM). Anodization causes a strong reduction of CL intensity as well as a blue spectral shift. Additional blue shift and enhancement of CL intensity is observed in samples cracked in vacuum by the effect of the SEM electron beam, which is explained by the reduction of the influence of surface states on the recombination mechanism. The relationship of the CL spatial distribution with the multilayer porous structure is described. |
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| Cuvinte-cheie cathodoluminescence, Electron beams, etching, Indium compounds, scanning electron microscopy, vacuum |
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