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 SM ISO690:2012SIRBU, Lilian, URSACHI, Veaceslav, TIGINYANU, Ion, DOLGALEVA, Ksenia, BOYD, Robert W.. Er- and Eu-doped GaP-oxide porous composites for optoelectronic applications. In: Physica Status Solidi - Rapid Research Letters, 2007, vol. 1, pp. 13-15. ISSN 1862-6254. DOI: https://doi.org/10.1002/pssr.200600008 |
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  Physica Status Solidi - Rapid Research Letters |
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| Volumul 1 / 2007 / ISSN 1862-6254 | ||||||
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| DOI:https://doi.org/10.1002/pssr.200600008 | ||||||
| Pag. 13-15 | ||||||
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We demonstrate the controlled preparation of Er- and Eudoped GaP-oxide porous composites. The fabrication procedure entails the use of porous semiconductor templates and the impregnation of rare earth ions from a rare earth salt solution in alcohol and thermal treatment. The composites exhibit strong green and red emission that comes from finely dispersed ErPO4 and EuPO4 oxide submicron phases in the composite. These materials may prove useful in future generation of optoelectronic and photonic devices. |
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| Cuvinte-cheie Composite materials, Erbium, Europium, Gallium phosphide, Heat treatment, Impregnation, porosity, Semiconducting gallium compounds |
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