Pore etching in III-V and II-VI semiconductor compounds in neutral electrolyte
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2018-06-04 20:47
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TIGINYANU, Ion, URSACHI, Veaceslav, MONAICO, Eduard, FOCA, Eugen, FOLL, Helmut. Pore etching in III-V and II-VI semiconductor compounds in neutral electrolyte. In: Electrochemical and Solid-State Letters, 2007, vol. 10, pp. 127-129. ISSN 1099-0062. DOI: https://doi.org/10.1149/1.2771076
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Electrochemical and Solid-State Letters
Volumul 10 / 2007 / ISSN 1099-0062

Pore etching in III-V and II-VI semiconductor compounds in neutral electrolyte

DOI:https://doi.org/10.1149/1.2771076

Pag. 127-129

Tiginyanu Ion123, Ursachi Veaceslav1, Monaico Eduard2, Foca Eugen43, Foll Helmut4
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Technical University of Moldova,
3 Electrochemical Society,
4 Christian-Albrechts University of Kiel
 
 
Disponibil în IBN: 10 aprilie 2018


Rezumat

We propose to use a neutral electrolyte based on an aqueous solution of NaCl instead of commonly used aggressive acids or alkaline electrolytes for the purpose of electrochemical nanostructuring of GaAs and CdSe substrates. It is shown that the process of material porosification can be controlled by the conditions of anodic etching. A photoluminescence analysis of the porous structures obtained and referenced to the as-grown substrate demonstrates that an effective passivation of the surface occurs during anodization in this electrolyte. The results obtained pave the way for the development of optoelectronic devices based on electrochemically nanostructured GaAs and CdSe compounds, particularly for high-efficiency solar cells.

Cuvinte-cheie
Anodic oxidation, etching, Nanostructured materials, Optoelectronic devices, Passivation, photoluminescence, Semiconducting cadmium compounds, Sodium chloride, Solar cells