Photoexcitation Carrier Kinetics in WSe2 Nanolayers in the Vicinity of the Band Edge
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SHESTAKOVA, Anastasia; LAVROV, Sergey; BREKHOV, Kirill; ILYIN, Nikita; KUDRYAVTSEV, Andrei; MISHINA, E.; KULYUK, Leonid. Photoexcitation Carrier Kinetics in WSe2 Nanolayers in the Vicinity of the Band Edge. In: Physica Status Solidi (B) Basic Research. 2018, nr. 1(255), p. 0. ISSN 0370-1972.
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Physica Status Solidi (B) Basic Research
Numărul 1(255) / 2018 / ISSN 0370-1972

Photoexcitation Carrier Kinetics in WSe2 Nanolayers in the Vicinity of the Band Edge


DOI: 10.1002/pssb.201700259
Pag. 0-0

Shestakova Anastasia1, Lavrov Sergey1, Brekhov Kirill1, Ilyin Nikita1, Kudryavtsev Andrei1, Mishina E.1, Kulyuk Leonid2
 
1 Moscow Technological University (MIREA),
2 Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 22 februarie 2018


Rezumat

The photoexcitation and relaxation of carriers is studied in WSe2 nanolayers on Si/SiO2 substrate by optical pump–probe technique. The excitation wavelength falls in the vicinity of the band edge. The thickness variation of WSe2 layers acts as tuning of band gap of the layers. In this way, a band edge spectroscopy is carried out using the constant excitation wavelength. It is shown that the relaxation time constants increase with the thickness increase, while the amplitude of transient reflectivity changes nonmonotonically. A model is suggested describing the amplitude behavior.

Cuvinte-cheie
band gap renormalization, optical pump–probe spectroscopy, transition metal dichalcogenides,

Excitons, Luminescence, reflectivity