In this work the spectrum of energy levels multicharge nanoclusters of manganese atoms in silicon are investigated. It is found, that formation of multicharge nanocluters essentially changes the structure of energy states of manganese atoms in silicon and energy levels in the range of Е = ЕV (0.16–0.5) eV are formed. In such materials value of a photocurrent in the range of hν=0.16–0.6 eV increases continuously and in steps, it also possesses very high values, i.e. has high impurity photosensitivity. It is found, that photosensitivity of such samples in the range of hν=0.16–0.8 eV increases with electric field growth by the law ~ E3,8–4. It is established that by controlling of the charge states of nanoclusters, it is possible to change photoconductivity and photosensitivity of the materials in a wide area.