The impedance of single-crystal samples of PbTe(Ga) and Pb1-XGeXTe(Ga) (0≤x≤0.095) is investigated in the frequency range from 102 to 106 Hz and temperature range 4.2–300 K. The temperature dependence of the capacitance of all the Pb1-XGeXTe(Ga) samples studied exhibited two types of features. These are a pronounced peak at a temperature T ~ Tph, caused by a dielectric anomaly at the ferroelectric phase transition, and strong frequency dependent increase of the capacitance in the temperature region T < 100 K. The ferroelectric phase transition temperature for all the samples is found to be significantly higher than the characteristic temperatures of the long term relaxation process appearance. Thus these phenomena seem not to be correlated directly. The low temperature behavior of the capacitance may be caused by recharge processes in the impurity system accompanied by local reconstruction of the impurity center surrounding.