Photocurrent relaxation was investigated in pure and Pr-doped amorphous As₂S₃ films after constant illumination had been switched off. It is shown that, in the temperature range from 290 to 370 K and for the time interval 0.5-150 s, the photocurrent relaxation might be approximated as an algebraic function. An analytic model of the recombination-controlled photocurrent decay in amorphous semiconductors is formulated. For the As ₂S₃ samples with Pr impurity, the relaxation rate is lower and the form of the decay profile varies only lightly in comparison with non-doped samples. The results are discussed in terms of the band tails and deep acceptor-like centres present in a-As₂S₃ films.