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SM ISO690:2012 SCHON, Jan Hendrik, KLOC, Christian L., ARUSHANOV, Ernest, THOMAS, Gordon A., BUCHER, Ernst. On the metal-insulator transition in n-type doped CuGaSe2. In: Journal of Physics Condensed Matter, 2000, vol. 12, pp. 4603-4611. ISSN 0953-8984. DOI: https://doi.org/10.1088/0953-8984/12/21/305 |
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Journal of Physics Condensed Matter | ||||||
Volumul 12 / 2000 / ISSN 0953-8984 /ISSNe 1361-648X | ||||||
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DOI:https://doi.org/10.1088/0953-8984/12/21/305 | ||||||
Pag. 4603-4611 | ||||||
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Transport properties of n-type CuGaSe2 single crystals are investigated in the temperature range from 2 to 350 K. The effective donor concentration is varied between 2×1012 and 4.4×1017 cm-3 by co-doping with Ge and Zn. The charge transport properties are analyzed and interpreted in the framework of an Anderson metal-insulator transition. A critical donor concentration Nc of 1.4×1017 cm-3 is estimated, which is in good agreement with the Mott criterion (Nc1/3≈0.25/aH). However, the second characteristic concentration, above which the Fermi level merges into the conduction band, was not observed experimentally. This is in accordance with an estimate of 7×1017 cm-3 according to the Matsubara-Toyozawa criterion, which exceeds the highest donor concentrations achieved in this material so far. The effective dopant density in n-type CuGaSe2 is limited by self-compensation due to intrinsic defects (mainly Cu vacancies). Furthermore, at low temperatures a crossover from Mott- to Efros-Shklovskii-type variable range hopping is observed on the dielectric side of the transition. |
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Cuvinte-cheie Engineering controlled terms Band structure, Copper compounds, Electron transitions, Electron transport properties, Fermi level, Germanium, Point defects, Selenium compounds, Semiconductor doping, single crystals, Zinc Engineering uncontrolled terms Copper gallium selenide, Metal-insulator transition Engineering main heading Semiconducting gallium compounds |
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