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 SM ISO690:2012TIGINYANU, Ion, KRAVETSKY, Igor, URSACHI, Veaceslav, MAROWSKY, Gerd, HARTNAGEL, Hans Ludwig. Zn+, Zn+/P+ and Zn+/As+ implanted InP: Study of electrical and symmetry properties. In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Ed. 1, 11-15 mai 1997, New Jersey. New Jersey: Institute of Electrical and Electronics Engineers Inc. (IEEE), 1997, pp. 537-538. ISSN 10928669. |
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 Conference Proceedings - International Conference on Indium Phosphide and Related Materials 1997 |
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Conferința "8th International Conference on Indium Phosphide and Related Materials" 1, New Jersey, Statele Unite ale Americii, 11-15 mai 1997 | ||||||
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The activation efficiency of Zn impurity coimplanted with P and As ions in n-InP as well as the peculiarities of crystal lattice recovered during annealing were studied. It was found out that the influence of P and As coimplantation depend upon the dose of implantation and temperature of annealing. Samples coimplanted with P+ and As+ ions are annealed at temperatures ranging from 400 °C to 600 °C exhibit reduced Zn impurity activation. An improvement of Zn activation is achieved after dual implantation at moderate doses and at anneal temperatures greater than 700 °C. |
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| Cuvinte-cheie Annealing, Arsenic, Carrier concentration, Crystal lattices, Crystal symmetry, Hall effect, ion implantation, phosphorus, Second harmonic generation, Semiconductor doping, single crystals, Zinc |
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