UV radiation sensors with unitary and binary superficial barrier
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DOROGAN, Valerian, VIERU, Tatiana, KOSYAK, V., DAMASKIN, Ion, CHIRITA, F.. UV radiation sensors with unitary and binary superficial barrier. In: Proceedings of SPIE - The International Society for Optical Engineering, Ed. 5, 9-12 septembrie 1997, Bucharest. Bellingham, Washington: SPIE, 1998, Ediția 5, Vol.3405, pp. 1007-1012. ISSN 0277-786X. DOI: https://doi.org/10.1117/12.312705
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Proceedings of SPIE - The International Society for Optical Engineering
Ediția 5, Vol.3405, 1998
Conferința "Fifth Conference on Optics"
5, Bucharest, Romania, 9-12 septembrie 1997

UV radiation sensors with unitary and binary superficial barrier

DOI:https://doi.org/10.1117/12.312705

Pag. 1007-1012

Dorogan Valerian1, Vieru Tatiana1, Kosyak V.1, Damaskin Ion2, Chirita F.1
 
1 Technical University of Moldova,
2 Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 7 februarie 2024


Rezumat

UV radiation sensors with unitary and binary superficial barrier, made on the basis of GaP - SnO2 and GaAs - AlGaAs - SnO2 heterostructures, are presented in the paper. Technological and constructive factors, which permit to realize a high conversion efficiency and to exclude the influence of visible spectrum upon the photoanswer, are analyzed. It was established that the presence of an isotypical superficial potential barrier permits to suppress the photoanswer component formed by absorption of visible and infrared radiation in semiconductor structure bulk.

Cuvinte-cheie
A3B5 compounds, heterostructures, Superficial potential barrier, Ultraviolet radiation sensor