| Articolul precedent |
| Articolul urmator |
 |
 94 1 |
| Ultima descărcare din IBN: 2024-01-21 22:13 |
 SM ISO690:2012BODYUL, P., GARABAZHIU, V., GITSU, Dumitru. Electronic processes in bismuth type doped semimetals. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 18, 11-14 octombrie 1995, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 1995, pp. 407-410. DOI: https://doi.org/10.1109/SMICND.1995.495047 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Proceedings of the International Semiconductor Conference 1995 | ||||||
|
Conferința "International Semiconductor Conference" 18, Sinaia, Romania, 11-14 octombrie 1995 | ||||||
|
||||||
| DOI:https://doi.org/10.1109/SMICND.1995.495047 | ||||||
| Pag. 407-410 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
Properties of high by doped of bismuth alloys with impurities of the VI group are investigated. Anomalous behavior of statistical and kinetical characteristics dependence upon the impurity concentrations is interpreted within the framework of a notion of impurity states in semimetal systems. |
||||||
| Cuvinte-cheie Carrier concentration, charge carriers, Crystal impurities, Metalloids, Semiconductor doping |
||||||
|
|
|
|
