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 SM ISO690:2012POPA, Veaceslav. The photoelectrochemical etching as a tool for GaN gas sensor fabrication. In: Электронная обработка материалов, 2005, nr. 4(41), pp. 7-10. ISSN 0013-5739. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Электронная обработка материалов |
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| Numărul 4(41) / 2005 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 7-10 | ||||||
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Whisker and columnar structures of GaN were fabricated using photoelectrochemical etching in KOH solution. The conductivity changes of the obtained structures to ethylic alcohol and hydrogen were studied. Optimized design for sensor fabrication is proposed. |
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