The current-voltage characteristics (CVC) of the Ni-a-ZnP2-structures are described in the temperature interval (273 - 420) K by the well-known relations for the contact of the metal with semiconductor, taking into account the voltage decreasing on the resistance of the crystal bulk. The coefficient of ideality equals about η=(1.07 – 1.12), (1.24 – 1.60) and (1.50 – 1.99) for the Ni-a-ZnP2, In-aZnP2 and Au-a-ZnP2-structures. The temperature dependence of the saturation current has the exponential character with the energy of activation Ea=0.95, 0.99 – 1.13, 1.15 – 1.20 eV for the barriers In-, Ni-, Au-aZnP2. The current behavior on the voltage for the structures In-, Ni-a-ZnP2 is explained by the diffusion model of the carrier transfer through barrier for the one sign of carriers taking into account the concentration dependence on the temperature. Analysis of the barrier CVC of Au-a-ZnP2 and their temperature dependencies shows on the participating of holes on the carrier transfer and on the increasing of the recombination process in space charge domain (SCD). On the part of breakdown CVC the dependence of the carrier on the voltage has an exponential character. The exponentials are changed depending on the concentration of deep levels and in small part on the other characteristics of the barrier. The total conductivity of the structures based on the electronic a-ZnP2 is the function of the frequency, voltage, light radiation and temperature and depends on the prehistory of the sample, on the manner of the deep level population. The injection of the charge curriers in the SCD in the case of forward bias leads to the population of the deep levels. The decreasing of the compensation level in the quasiequilibrium domain after the off-switching of the forward bias increases the capacity and decreases the conductivity. The spectral characteristics of the structures with all metals in the range of wave lengths about λ<590 nm have the same character. Photocurrent at the photon energies much more than the semiconductor gap edge (Egi≥2.15 eV at 300 K) is due to the generation of nonequilibrium charge carriers in semiconductor. The small increasing of the photocurrent at the wave lengths 470 nm and 400 nm is due to the above existing interband transitions. The photocurrent depends on the frequency of light modulation. In the first domain in the frequency band f = 10 – 100 Hz the photocurrent is the constant in time. At the further increasing of the modulation frequency of the light intensity the photocurrent decreases along the dependence ph J ~ 1/ f n. In the second domain with the frequency 500-3·105 Hz the decreasing of photocurrents takes place at the frequency f>20 KHz. The investigations of the electric characteristics of the Shottky barriers for the tetragonal ZnP2 show take place the effects, linked with complex nature of the defects as the frequency dependence of the total conductivity and relaxation phenomena of the hysteretical character.