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 SM ISO690:2012GUDZEV, Valery, ZUBKOV, M., LITVINOV, V., MASLOV, A.. The ionization energy determination of deep level defects in inhomogeneous doped semiconductor barrier structures. In: Telecommunications, Electronics and Informatics, Ed. 5, 20-23 mai 2015, Chișinău. Chișinău, Republica Moldova: 2015, Ed. 5, pp. 176-178. ISBN 978-9975-45-377-6. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Telecommunications, Electronics and Informatics Ed. 5, 2015 |
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Conferința "Telecommunications, Electronics and Informatics" 5, Chișinău, Moldova, 20-23 mai 2015 | ||||||
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| Pag. 176-178 | ||||||
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In this paper the high accuracy method of determination of the ionization energy of uniformly distributed defects in semiconductor barrier structures with inhomogeneous doped base is developed. |
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| Cuvinte-cheie deep level transient spectroscopy, determination of ionization energy, Schottky diode |
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