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SM ISO690:2012 GUDZEV, Valery, ZUBKOV, M., LITVINOV, V., MASLOV, A.. The ionization energy determination of deep level defects in inhomogeneous doped semiconductor barrier structures. In: Telecommunications, Electronics and Informatics, Ed. 5, 20-23 mai 2015, Chișinău. Chișinău, Republica Moldova: 2015, Ed. 5, pp. 176-178. ISBN 978-9975-45-377-6. |
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Telecommunications, Electronics and Informatics Ed. 5, 2015 |
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Conferința "Telecommunications, Electronics and Informatics" 5, Chișinău, Moldova, 20-23 mai 2015 | ||||||
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Pag. 176-178 | ||||||
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In this paper the high accuracy method of determination of the ionization energy of uniformly distributed defects in semiconductor barrier structures with inhomogeneous doped base is developed. |
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Cuvinte-cheie deep level transient spectroscopy, determination of ionization energy, Schottky diode |
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<meta name="citation_title" content="The ionization energy determination of deep level defects in inhomogeneous doped semiconductor barrier structures"> <meta name="citation_author" content="Gudzev Valery"> <meta name="citation_author" content="Zubkov M."> <meta name="citation_author" content="Litvinov V."> <meta name="citation_author" content="Maslov A."> <meta name="citation_publication_date" content="2015"> <meta name="citation_collection_title" content="Telecommunications, Electronics and Informatics"> <meta name="citation_volume" content="Ed. 5"> <meta name="citation_firstpage" content="176"> <meta name="citation_lastpage" content="178"> <meta name="citation_pdf_url" content="https://ibn.idsi.md/sites/default/files/imag_file/176-178.pdf">