Afișare rezultate

SM ISO690:2012

The ionization energy determination of deep level defects in inhomogeneous doped semiconductor barrier structures

Gudzev Valerii, Zubkov M., Litvinov V., Maslov A.

Ryazan State Radio Engineering University Ryazan

Telecommunications, Electronics and Informatics

Ed. 5. 2015. Chișinău, Republica Moldova. ISBN 978-9975-45-377-6.

Disponibil online 21 May, 2018. Descarcări-0. Vizualizări-460

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Deep level transient spectroscopy characterization of porous GaP layers

Călin Mircea

Institute of Applied Physics, Academy of Sciences of Moldova

Proceedings of the International Semiconductor Conference

Vol. 1. 2000. New Jersey. DOI 10.1109/SMICND.2000.

Disponibil online 29 November, 2023. Descarcări-0. Vizualizări-136

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Transient photocapacitance spectroscopy of Al-As2Se3 junction

Shutov Serghei, Vasiliev Ion

Institute of Applied Physics, Academy of Sciences of Moldova

Proceedings of the International Semiconductor Conference

Vol. 2. 1996. New Jersey. DOI 10.1109/SMICND.1996.

Disponibil online 6 December, 2023. Descarcări-0. Vizualizări-116

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