The ionization energy determination of deep level defects in inhomogeneous doped semiconductor barrier structures

Gudzev Valery; Zubkov M.; Litvinov V.; Maslov A.

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SM ISO690:2012

GUDZEV, Valery, ZUBKOV, M., LITVINOV, V., MASLOV, A.. The ionization energy determination of deep level defects in inhomogeneous doped semiconductor barrier structures. In: Telecommunications, Electronics and Informatics, Ed. 5, 20-23 mai 2015, Chișinău. Chișinău, Republica Moldova: 2015, Ed. 5, pp. 176-178. ISBN 978-9975-45-377-6.

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Telecommunications, Electronics and Informatics
Ed. 5, 2015

Conferința "Telecommunications, Electronics and Informatics"
5, Chișinău, Moldova, 20-23 mai 2015

The ionization energy determination of deep level defects in inhomogeneous doped semiconductor barrier structures

Pag. 176-178

Gudzev Valery, Zubkov M., Litvinov V., Maslov A.

Ryazan State Radio Engineering University Ryazan

Disponibil în IBN: 21 mai 2018

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Rezumat

In this paper the high accuracy method of determination of the ionization energy of uniformly distributed defects in semiconductor barrier structures with inhomogeneous doped base is developed.

Cuvinte-cheie
deep level transient spectroscopy,

determination of ionization energy, Schottky diode

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