| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 |
 147 0 |
 SM ISO690:2012BOTNARYUK, V., RAEVSKY, Simion, BELIKOV, Vasylyj, ZHILYAEV, Yurii, RUD, Yu., FEDOROV, Leonid, RUD, V.. Polarization photosensitivity of GaN/Si heterojunctions. In: Semiconductors, 1999, vol. 33, pp. 301-304. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187683 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Semiconductors |
||||||
| Volumul 33 / 1999 / ISSN 1063-7826 | ||||||
|
||||||
| DOI:https://doi.org/10.1134/1.1187683 | ||||||
| Pag. 301-304 | ||||||
|
||||||
| Vezi articolul | ||||||
| Rezumat | ||||||
A technique for fabricating n-GaN/Si heterojunctions, which includes chemical deposition of GaN layers with thicknesses of up to 20 μm on a Si substrate in an open gas-transport system, is developed. The photoelectric properties of isotypic and anisotypic heterojunctions are studied in natural and linearly polarized light. A polarization photosensitivity is observed when linearly polarized light is obliquely incident on the surface of the GaN layers. The induced photopleochroism increases quadratically with the angle of incidence θ and reaches 20% for θ≅75°. GaN/Si heterojunctions may be useable as broad-band photoanalyzers of linearly polarized light. |
||||||
| Cuvinte-cheie Magnesium Oxide, Titanium Nitride, Parallelepipeds |
||||||
|
|
|
|
