Polarization photosensitivity of GaN/Si heterojunctions

Botnaryuk V.; Raevsky Simion; Belikov Vasylyj; Zhilyaev Yurii; Rud Yu.; Fedorov Leonid; Rud V.

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BOTNARYUK, V., RAEVSKY, Simion, BELIKOV, Vasylyj, ZHILYAEV, Yurii, RUD, Yu., FEDOROV, Leonid, RUD, V.. Polarization photosensitivity of GaN/Si heterojunctions. In: Semiconductors, 1999, vol. 33, pp. 301-304. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187683

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Semiconductors

Volumul 33 / 1999 / ISSN 1063-7826

Polarization photosensitivity of GaN/Si heterojunctions

DOI:https://doi.org/10.1134/1.1187683

Pag. 301-304

Botnaryuk V.¹, Raevsky Simion¹, Belikov Vasylyj², Zhilyaev Yurii², Rud Yu.², Fedorov Leonid², Rud V.³

¹ Moldova State University,
² Ioffe Physical-Technical Institute, RAS,
³ State Educational Institution St. Petersburg State Polytechnical University

Disponibil în IBN: 16 octombrie 2023

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A technique for fabricating n-GaN/Si heterojunctions, which includes chemical deposition of GaN layers with thicknesses of up to 20 μm on a Si substrate in an open gas-transport system, is developed. The photoelectric properties of isotypic and anisotypic heterojunctions are studied in natural and linearly polarized light. A polarization photosensitivity is observed when linearly polarized light is obliquely incident on the surface of the GaN layers. The induced photopleochroism increases quadratically with the angle of incidence θ and reaches 20% for θ≅75°. GaN/Si heterojunctions may be useable as broad-band photoanalyzers of linearly polarized light.

Cuvinte-cheie
Magnesium Oxide, Titanium Nitride, Parallelepipeds

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