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 SM ISO690:2012BOTNARYUK, V., RAEVSKY, Simion, BELIKOV, Vasylyj, ZHILYAEV, Yurii, RUD, Yu., FEDOROV, Leonid, RUD, V.. Polarization photosensitivity of GaN/Si heterojunctions. In: Semiconductors, 1999, vol. 33, pp. 301-304. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187683 |
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  Semiconductors |
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| Volumul 33 / 1999 / ISSN 1063-7826 | ||||||
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| DOI:https://doi.org/10.1134/1.1187683 | ||||||
| Pag. 301-304 | ||||||
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A technique for fabricating n-GaN/Si heterojunctions, which includes chemical deposition of GaN layers with thicknesses of up to 20 μm on a Si substrate in an open gas-transport system, is developed. The photoelectric properties of isotypic and anisotypic heterojunctions are studied in natural and linearly polarized light. A polarization photosensitivity is observed when linearly polarized light is obliquely incident on the surface of the GaN layers. The induced photopleochroism increases quadratically with the angle of incidence θ and reaches 20% for θ≅75°. GaN/Si heterojunctions may be useable as broad-band photoanalyzers of linearly polarized light. |
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| Cuvinte-cheie Magnesium Oxide, Titanium Nitride, Parallelepipeds |
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<meta name="citation_title" content="Polarization photosensitivity of GaN/Si heterojunctions"> <meta name="citation_author" content="Botnaryuk V."> <meta name="citation_author" content="Raevsky Simion"> <meta name="citation_author" content="Belikov Vasylyj"> <meta name="citation_author" content="Zhilyaev Yurii"> <meta name="citation_author" content="Rud Yu."> <meta name="citation_author" content="Fedorov Leonid"> <meta name="citation_author" content="Rud V."> <meta name="citation_publication_date" content="1999/03/01"> <meta name="citation_journal_title" content="Semiconductors"> <meta name="citation_firstpage" content="301"> <meta name="citation_lastpage" content="304"> <meta name="citation_pdf_url" content="https://link.springer.com/article/10.1134/1.118757">
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