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 SM ISO690:2012SIRKELI, Vadim, YILMAZOGLU, Oktay, KUPPERS, Franko, HARTNAGEL, Hans Ludwig. Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures. In: Semiconductor Science and Technology, 2015, vol. 30, p. 0. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/30/6/065005 |
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  Semiconductor Science and Technology |
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| Volumul 30 / 2015 / ISSN 0268-1242 | ||||||
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| DOI:https://doi.org/10.1088/0268-1242/30/6/065005 | ||||||
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We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current-voltage dependences of investigated LEDs show a threshold voltage of 3.1 V, 5.4 V and 5.6 V for LED devices without and with the presence of p-NiO and n-ZnSe interlayers, respectively. It is found that p-NiO, n-ZnSe and n-ZnO interlayers act as an electron blocking layer, active media layer, and electron transport layer, respectively. It is established that the insertion of both p-NiO and n-ZnSe interlayers leads to the enhancement of charge carrier-confinement in the active region and to the significant increase of internal quantum efficiency (IQE) of the LED device up to 82%, which is comparable with IQE values in order to obtain better AlGaN- and InGaN-based LEDs. It is found that the efficiency of LED devices at 100 A cm-2 is equal to 0.024, 0.09 and 16.4% of external quantum efficiency (EQE), 1.3 × 10-4, 1.6 × 10-4, and 6.4 lm W-1 of PE, and 1.3 × 10-4, 2.9 × 10-4, and 12 cd A-1 of CE for p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED devices, respectively. |
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| Cuvinte-cheie Gallium nitride, internal quantum efficiency, light-emitting diode, nickel oxide, zinc oxide, Zinc selenide |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Sirkeli, V.P.</dc:creator> <dc:creator>Yilmazoglu, O.</dc:creator> <dc:creator>Kuppers, F.</dc:creator> <dc:creator>Hartnagel, H.</dc:creator> <dc:date>2015-06-01</dc:date> <dc:description xml:lang='en'><p>We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED design optimization which includes bandgap engineering, thickness and doping of constituent layers. The current-voltage dependences of investigated LEDs show a threshold voltage of 3.1 V, 5.4 V and 5.6 V for LED devices without and with the presence of p-NiO and n-ZnSe interlayers, respectively. It is found that p-NiO, n-ZnSe and n-ZnO interlayers act as an electron blocking layer, active media layer, and electron transport layer, respectively. It is established that the insertion of both p-NiO and n-ZnSe interlayers leads to the enhancement of charge carrier-confinement in the active region and to the significant increase of internal quantum efficiency (IQE) of the LED device up to 82%, which is comparable with IQE values in order to obtain better AlGaN- and InGaN-based LEDs. It is found that the efficiency of LED devices at 100 A cm<sup>-2</sup> is equal to 0.024, 0.09 and 16.4% of external quantum efficiency (EQE), 1.3 × 10<sup>-4</sup>, 1.6 × 10<sup>-4</sup>, and 6.4 lm W<sup>-1</sup> of PE, and 1.3 × 10<sup>-4</sup>, 2.9 × 10<sup>-4</sup>, and 12 cd A<sup>-1</sup> of CE for p-GaN/n-ZnO, p-GaN/p-NiO/n-ZnO, and p-GaN/p-NiO/n-ZnSe/n-ZnO LED devices, respectively.</p></dc:description> <dc:identifier>10.1088/0268-1242/30/6/065005</dc:identifier> <dc:source>Semiconductor Science and Technology () 0-0</dc:source> <dc:subject>Gallium nitride</dc:subject> <dc:subject>internal quantum efficiency</dc:subject> <dc:subject>light-emitting diode</dc:subject> <dc:subject>nickel oxide</dc:subject> <dc:subject>zinc oxide</dc:subject> <dc:subject>Zinc selenide</dc:subject> <dc:title>Effect of p-NiO and n-ZnSe interlayers on the efficiency of p-GaN/n-ZnO light-emitting diode structures</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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